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<oembed><version>1.0</version><provider_name>PV Tech</provider_name><provider_url>https://www.pv-tech.org</provider_url><title>Towards the next generation of highefficiency Cu(In,Ga)Se2 thin-film solar cells &#x2013; Sharc25</title><type>rich</type><width>600</width><height>338</height><html>&lt;blockquote class="wp-embedded-content" data-secret="qQ9cifvpQW"&gt;&lt;a href="https://www.pv-tech.org/technical-papers/towards-the-next-generation-of-highefficiency-cuingase2-thinfilm-solar-cells-sharc25/"&gt;Towards the next generation of highefficiency Cu(In,Ga)Se2 thin-film solar cells &#x2013; Sharc25&lt;/a&gt;&lt;/blockquote&gt;&lt;iframe sandbox="allow-scripts" security="restricted" src="https://www.pv-tech.org/technical-papers/towards-the-next-generation-of-highefficiency-cuingase2-thinfilm-solar-cells-sharc25/embed/#?secret=qQ9cifvpQW" width="600" height="338" title="&#x201C;Towards the next generation of highefficiency Cu(In,Ga)Se2 thin-film solar cells &#x2013; Sharc25&#x201D; &#x2014; PV Tech" data-secret="qQ9cifvpQW" frameborder="0" marginwidth="0" marginheight="0" scrolling="no" class="wp-embedded-content"&gt;&lt;/iframe&gt;&lt;script&gt;
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</html><thumbnail_url>https://www.pv-tech.org/wp-content/uploads/2020/12/Towards_the_next_generation_of_highefficiency.jpg</thumbnail_url><thumbnail_width>1041</thumbnail_width><thumbnail_height>598</thumbnail_height><description>The EU Horizon Sharc25 project has provided deep insights into highly efficient Cu(In,Ga)Se2 (CIGSe) thin-film solar cells fabricated by lowand high-temperature co-evaporation using advanced characterization methods, analytical tools, device simulation, and density functional theory modelling. This complementary approach led to a continuous knowledgedriven development and improvement of the CIGSe absorber. Based on optimized chemical composition, profiles, and alkali metal post-deposition treatments (PDT) using KF, RbF, and CsF, the CIGSe cell efficiency could be substantially increased to a record value of 22.6%. Due to additional modifications at the absorber/emitter (replacement of standard buffer system by a combination of thin CdS and TiO2) and back contact/ absorber (introduction of Al back reflector in combination with InZnO diffusion barrier) interfaces, in particular the short-circuit current could be increased. Furthermore, passivation layers in combination with point contact schemes at the CIGSe front and back side were developed and are still under investigation.</description></oembed>
